Technology
GaN - Gallium Nitride
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Our selection of GaN-based products are rising to the challenge of rapidly evolving demands for size, reliability, linearity, power density and energy efficiency, by providing RF system engineers with the flexibility to achieve significantly higher power and efficiency, with lower part count, board space and resultant cost.
Browse our GaN product categories below, as well as the application notes and white papers included in the Technical Resources section. And please do not hesitate to contact us for design assistance.
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Semiconductors - Discretes
Semiconductors - ICs
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Application Notes
Nitronex Thermal Considerations for GaN Technology
Nitronex Substrates for GaN RF Devices
Nitronex Bias Sequencing & Temperature Compensation for GAN HEMTs
Nitronex Broadband Performance of GaN HEMTs
GaN Systems - PCB Thermal design for GaN Power Transistors
GaN Systems - Thermal design for Top-side cooled GaNPX-T devices
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Our portfolio of GaN-based products are rising to the challenge of rapidly evolving demands for size, reliability, linearity, power density and energy efficiency, by providing RF system engineers with the flexibility to achieve significantly higher power and efficiency, with lower part count, board space and resultant cost.
GaN technology is suited to meet today’s size, weight and power (“SWaP”) demands better than older technologies like GaAs because GaN offers:
And GaN has better thermal properties than competing GaAs technologies. Thermal conductivity for SiC is roughly 4x that of GaAs. An added benefit is that GaN can support the million hour MTTF reliability benchmark at a junction temperature of 200°C or higher versus 150°C for GaAs. These thermal advantages do not solve the thermal problem at the system level; however, they bring the thermal management concern down to a reasonable design trade-off for the system engineer.
For more detailed information on this technology, please refer to the technical articles and design considerations found in the Technical Resources tab.
Our portfolio of GaN-based products are rising to the challenge of rapidly evolving demands for size, reliability, linearity, power density and energy efficiency, by providing RF system engineers with the flexibility to achieve significantly higher power and efficiency, with lower part count, board space and resultant cost.
GaN technology is suited to meet today’s size, weight and power (“SWaP”) demands better than older technologies like GaAs because GaN offers:
- Higher power densities leading to reduced combining losses for a given power target
- Increased efficiency over frequency
- Ability to maintain high performance over wide bandwidths
- Higher thermal conductivity / lower thermal resistance (GaN on SiC)
And GaN has better thermal properties than competing GaAs technologies. Thermal conductivity for SiC is roughly 4x that of GaAs. An added benefit is that GaN can support the million hour MTTF reliability benchmark at a junction temperature of 200°C or higher versus 150°C for GaAs. These thermal advantages do not solve the thermal problem at the system level; however, they bring the thermal management concern down to a reasonable design trade-off for the system engineer.
For more detailed information on this technology, please refer to the technical articles and design considerations found in the Technical Resources tab.