Wolfspeed C6D 650 V SiC Schottky Diodes

Additions to Wolfspeed’s family of SiC Schottky diodes enabling industry-leading efficiency and power density for the most demanding power conversion applications
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Wolfspeed C6D 650 V SiC Schottky Diodes

Wolfspeed C6D 650 V SiC Schottky Diodes

Wolfspeed continues to add to its 6th generation (C6D) 650 V SiC Schottky diode family based on its innovative, robust and reliable 150 mm SiC wafer technology.

The C6D technology offers lowest forward voltage drop (VF = 1.27 V @ 25°C) that have a significant impact on the reduction of conduction losses, which further enable extremely high system level efficiency and power density in the most demanding power conversion applications, including power factor correction (PFC) and high-voltage DC/DC converters.

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Wolfspeed C6D 650 V SiC Schottky Diodes  

Features

  • Compatible with a 2ASC series gate driver core
  • Compatible with a specific type of SiC device
  • Designed for evaluation purposes only

    • Key Features

  • Low VF = 1.27 V (25°C) & 1.37 (175°C)
  • Best-in-class DVF/DT
  • Zero reverse recovery
  • High breakdown voltage
  • Low leakage current
  • Wide range of Tj (-55°C to 175°C)
  • Improved thermal stability

    • Key Applications

  • UPS
  • Medical
  • Consumer Electronics
  • PC
  • Solar

    • Ask an Engineer
    Part Number
    VRRM
    IF
    VF (25°C)
    Package Options
    C6D50065H
    650 V
    50 A
    1.3V
    TO-247-2
    C6D50065D1
    650 V
    50 A
    1.3 V
    TO-247-3
    C6D20065D1
    650 V
    20 A
    1.27 V
    TO-247-3
    C6D20065G
    650 V
    20 A
    1.27 V
    TO-263-2
    C6D20065H
    650 V
    20 A
    1.27 V
    TO-247-2
    C6D20065D
    650 V
    20 A
    1.27 V
    TO-247-3
    C6D16065D
    650 V
    16 A
    1.27 V
    TO-247-3
    C6D10065A
    650 V
    10 A
    1.27 V
    TO-220-2
    C6D10065G
    650 V
    10 A
    1.27 V
    TO-263-2
    C6D10065E
    650 V
    10 A
    1.27 V
    TO-252-2
    C6D08065A
    650 V
    8 A
    1.27 V
    TO-220-2
    C6D08065E
    650 V
    8 A
    1.27 V
    TO-252-2
    C6D08065G
    650 V
    8 A
    1.27 V
    TO-263-2
    C6D06065A
    650 V
    6 A
    1.27 V
    TO-220-2
    C6D06065E
    650 V
    6 A
    1.27 V
    TO-252-2
    C6D06065G
    650 V
    6 A
    1.27 V
    TO-263-2
    C6D04065A
    650 V
    4 A
    1.27 V
    TO-220-2
    C6D04065E
    650 V
    4 A
    1.27 V
    TO-252-2

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    About our Team of Experts

    Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.
     
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