Innoscience - INN650D080BS

In Stock: Innoscience 650V, 29A GaN-on-Si Power Transistor in DFN, 8 x 8 Package
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INN650D080BS: 650 V, 29 A GaN-on-Si Power Transistor 

INN650D080BS: 650 V, 29 A GaN-on-Si Power Transistor 

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size.
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  • Features
  • Enhancement mode transistor-Normally off power switch
  • Ultra high switching frequency
  • No reverse-recovery charge
  • Low gate charge, low output charge
  • Qualified for industrial applications according to JEDEC Standards
  • ESD safeguard
  • RoHS, Pb-free, REACH-compliant
  • Construction Details
  • AC-DC converters
  • DC-DC converters
  • BCM/DCM totem pole PFC
  • Fast battery charging
  • High density power conversion
  • High efficiency power conversion
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  • Specifications
Parameter
Value
VDS,max
650V
RDS(on),max @ VGS = 6 V
80mΩ
QG,typ @ VDS = 400 V
6.2nC
ID,pulse
58A
QOSS @ VDS = 400 V
60nC
Qrr @ VDS = 400 V
0nC

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.
 
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