EliteSiC 3rd Generation Silicon Carbide MOSFETs​

SiC solutions for Automotive and Industrial Applications
RFPD
onsemi EliteSiC 3rd Generation (M3) of 1200V Silicon Carbide MOSFETs

onsemi EliteSiC 3rd Generation (M3) of 1200V Silicon Carbide MOSFETs

These 12000V M3S planar SiC MOSFETs are optimized for fast switching applications. Their planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. The family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

onsemi EliteSiC M3 - Benefits

3RD GENERATION SiC OFFERING

  • Optimized for high temperature operation
  • Stable reverse recovery over temperature
  • Improved parasitic capacitance for high frequency high efficiency application
  • Large die with low RDS(on) available

M3 Family - 1200V SiC MOSFETs

RDS(ON) (mΩ) Typical @Vgs: 18V
TO-247-3L
TO-247-4L
D2PAK-7L
Automotive grade uses “NV” 
Industrial grade uses “NT”
14
NTH4L014N120M3P
NTBG014N120M3P
22
NTHL022N120M3S
NTH4L022N120M3S
NTBG022N120M3S
NVH4L022N120M3S
NVBG022N120M3S
29
NTHL030N120M3S
NTH4L030N120M3S
NTBG030N120M3S
NVH4L030N120M3S
NVBG030N120M3S
40
NTHL040N120M3S
NTH4L040N120M3S
NTBG040N120M3S
NVH4L040N120M3S
NVBG040N120M3S
65
NTHL070N120M3S
NTH4L070N120M3S
NTBG070N120M3S
NVH4L070N120M3S
NVBG070N120M3S

Additional Resources

onsemi EliteSiC M3S Technology for High-Speed Switching Applications
Learn more about onsemi’s 1200V M3S SiC MOSFET technology developed specifically for high-speed switching applications.
LEARN MORE »

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.
 
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