RFPD
Skyworks Isolated Drivers for GaN

Skyworks Isolated Drivers for GaN

August 3, 2023

Skyworks

Gallium Nitride, Gate Drivers

This tech chat focuses on some of the unique characteristics of driving Gallium Nitride (GaN) power FETs. These include reviewing the most critical parameters for selecting an isolated driver for GaN power transistors, why short dead time is particularly important with GaN switching applications and whether drivers can function at switching frequencies higher than 500 kHz.

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Energy & Power Design Support

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.
 
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