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Gallium Nitride (GaN)

Gallium Nitride (GaN)

Gallium Nitride, a wide band gap semiconductor, is rapidly displacing Silicon as the material of choice for power transistors. With their superior material properties and simplicity of use, Gan Systems’ GaN E-HEMTs allow designers to set new standards for efficiency, power density, size and weight.

We stock and support the following Gallium Nitride (GaN)

GaN Power Transistor Test/Evaluation Product
GaN Power Transistors
Gate Driver ICs
Search All Gallium Nitride (GaN)
INN100W14-B

Innoscience

The INN100W14 has been manufactured using the highest quality materials and the latest manufacturing processes, resulting in a device that is both highly efficient and highly reliable.

  • GaN-on-Silicon E-mode HEMT technology
  • Dual Channels, Common Source
  • Ultra High Switching Frequency
  • Fast and Controllable Fall and Rise Time
  • Ultra-low on Resistance
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Energy & Power Design Support

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.