NXP Accelerates 5G Designs with RapidRF

NXP Accelerates 5G Designs with RapidRF

November 18, 2022

5G

As Open RAN (O-RAN) continues to be deployed across the world, NXP enables faster 5G O-RAN deployments by creating enhanced reference designs. This includes an RF approach into customer designs with our RapidRF Smart LDMOS Front-End Solutions known as the ‘SL Series’.
NXP’s 2nd generation RapidRF front-end reference board has been designed to save board space, reduce overall complexity and provide a complete ready-to-use circuit for TDD cellular applications. Like previous generations, this 2nd generation RapidRF implements fully matched amplifiers 50 ohms in and 50 ohms out. This allows for a complete line-up with no tuning required for ease of use.
RapidRF reference circuit showing complete layout of NXP’s PA, pre-driver, Rx LNA with T/R switch and a circulator.
RapidRF reference circuit showing complete layout of NXP’s PA, pre-driver, Rx LNA with T/R switch and a circulator.

The 2nd generation RapidRF now also includes a PA module with integrated autobias control that is factory preset for the optimal bias point, or it can be adjusted by the programmable serial interface to adjust for each application. The integrated autobias control has a novel closed-looped feedback circuit that adjusts the LDMOS gate voltage to maintain a consistent quiescent bias current for continuous temperature tracking.

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