Versatile, Wideband GaN Devices in 3x3 QFN16 Packages

Packaged GaN-on-SiC HEMTs for high-performance RF applications

Guerrilla RF’s new 30-watt GRF0020 and 50-watt GRF0030 are unmatched discrete GaN-on-SiC HEMTs that operate from DC to 7 GHz and DC to 6 GHz, respectively, on 50 V supply rails. The devices can also function on 28 V supply rails, delivering 19 W and 25 W of saturated power output.

New! GRF0020 & GRF0030 from GuerrillaRF

The wide bandwidth of these new devices makes them suitable for a variety of applications, including 5G/cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations.

Applications

  • 5G base stations and network infrastructure
  • Satellite communication systems
  • Microwave and millimeter-wave communications
  • Advanced driver-assistance systems (ADAS)
  • Collision detection radar
  • Medical imaging devices (e.g., MRI)
  • RF heating and plasma generation
  • Semiconductor testing equipment
  • Broadcast transmitters
  • High-power microwave systems
  • Distributed Antenna Systems (DAS)
  • Repeaters
  • High-power laser amplification

Also available as bare die: GRF0020D

GRF0020

The GRF0020 is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7.0GHz on a 50V supply rail. This device can also function on a 28V supply rail, delivering 19W of saturated power output.
  • Operating frequency range: DC to 7.0 GHz
  • Maximum output power (PSAT): 30 W @ 50 V; 19 W @ 28 V
  • Operating drain voltage: 50 V & 28 V
  • Power gain: 16 dB (@ 50 V)
  • Small signal gain: 15.5 dB (@ 50 V)
  • Saturated drain efficiency: 48% (@ 50 V)
  • Saturated output power: 45 dBm (@ 50 V)
  • Suitable for pulsed & linear applications

Also available as bare die: GRF0030D

GRF0030

The GRF0030 is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. This device can also function on a 28V supply rail, delivering 25W of saturated power output.
  • Operating frequency range: DC to 6.0 GHz
  • Maximum output power (PSAT): 50 W @ 50 V; 25 W @ 28 V
  • Operating drain voltage: 50 V & 28 V
  • Power gain: 16 dB (@ 50 V)
  • Small signal gain: 15.5 dB (@ 50 V)
  • Saturated drain efficiency: 54.5% (@ 50 V)
  • Saturated output power: 47 dBm (@ 50 V)
  • Suitable for pulsed & linear applications

Evaluation Boards  (GRF0020 & GRF0030)

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GRF0020-EVB

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GRF0030-EVB

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