Solutions for 5G Active Antennas and Small Cells

NXP offers the widest available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration.
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NXP Power Amplifiers

NXP Power Amplifiers

NXP offers the widest available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration.

Discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs.

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NXP  Power Amplifers

LDMOS ICs

NXP LDMOS IC’s offer high performance and integration to speed your development. These Multi-Chip Modules (MCMs) are built on high performance LDMOS. LDMOS ICs simplify design implementation as they incorporate multiple gain stages, 50 ohm matching for input or input/output, and Doherty splitters and combiners. Covering 0.4 – 3.7 GHz with average power handling of 4-10W per device, LDMOS ICs are ideal for DAS/AAS, small cells, and repeaters.
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PA Modules

NXP PA Modules were developed for OEMs to deploy 5G mMIMO equipment quickly.  The first generation of LDMOS PAM’s included 50-Ohm impedance matching (I/O) and Doherty splitters and combiners.  Later releases included integrated gate drivers (Smart LDMOS) and GaN.  The NXP PA Modules are optimized for 5G Sub-6GHz mMIMO, small cells and repeaters from 2.3 – 4.2 GHz, with average power levels of 2.5-9 W.

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Discrete Devices

MMIC amplifiers and integrated multi-chip modules can speed development time, but not every project can leverage one of these solutions. NXP offers a full line of discrete RF transistors and reference circuits to help tackle your next high-power project. Whether it is for mMIMO or Macro base station and Remote Radio Units, NXP Discrete Transistors can get you to market faster. NXP discrete transistors are offered in LDMOSFET and GaN on SiC HEMT technologies, covering 0.4 – 4.2 GHz with power levels spanning 2W average to more than 80W average.
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NXP  Product Features

New Family of 5G GaN Discrete Massive MIMO Solutions from NXP
With this launch, NXP’s discrete massive MIMO portfolio now covers all cellular frequency bands from 2.3 to 4.0 GHz, leveraging NXP’s latest proprietary GaN technology.
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NXP Versatile 55 W GaN on SiC HEMT
This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability.
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NXP 5G Resources

Rx Modules

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NXP’s Rx Modules are integrated multi-chip modules designed for TD-LTE and 5G mMIMO applications.

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RapidRF Reference Design

NXP

RapidRF reference boards are ideal for radio units requiring 2.5-8W (34-39 dBm) average transmit power at the antenna.

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NXP Thin mMIMO

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NXP has introduced a family of 5G massive MIMO modules utilizing its innovative new top-side cooling package technology.

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RF & Microwave Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

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About our Team of Experts

Richardson RFPD has a team of over 50 technical resources available to provide design assistance on a variety of topics.  Although there are too many to name, we have highlighted specific topics that provide a representation of our support. 

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