RF Power Transistors are discrete, single gain stage semiconductors that can be optimized to develop customized RF Amplifier circuits. Richardson RFPD supports the largest offering of RF power transistor technologies, including silicon biploar junction, silicon RF MOSFETs, silicon RF LDMOS, and GaN HEMT transistors. Most devices are unmatched or partially matched to 50-ohms, but several impedance matched FETs (IMFETs) are available from Richardson RFPD.
We stock and support the following RF Power Transistors
NXP’s RF power macro GaN portfolio includes high power RF transistors designed for Remote Radio Heads (RRH) in cellular base stations. These devices are designed for 40 W to 80 W radio units targeting 4T4R and 8T8R infrastructures.
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Featured Manufacturers RF Power Transistors
