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Wolfspeed 

January 6, 2023
ハードウェア公開:1200V、450A SiCハーフブリッジモジュールを6個使用した600kW三相リファレンス設計
SiC in Stock: 3rd Generation 1200 V, 75 mΩ SiC MOSFET in TO-263-7 Package
SiCショットキーダイオードの新製品シリーズは最高水準の効率と高パワー密度を実現します。
業界で最も低い伝導性とスイッチング損失、より小さくより軽い高効率の電力変換を可能に
Wolfspeed Expands 62mm BM3 SiC Power Module Offering, Ideal for Higher-Frequency Industrial Applications.
Semiconductor device fabrication processes have several distinct and intricate steps. Power supplies used in semiconductor fab equipment are essential for every task at the front and back end of the process.
This article focuses on highlighting how SpeedFit can help in comparing different topologies and assist in designing the most efficient converter using AC/DC applications as example.
The direct impact of new efficiency standards is the undisputed need for Silicon Carbide (SiC).
Wolfspeed’s new automotive qualified E-Series (E3M) 650 V, 60 mΩ MOSFET family helps designers meet the demands of the EV OBC application space.
This paper will focus on bidirectional OBCs and discuss the advantages of Silicon Carbide (SiC) in both medium-power (6.6 kW) and high-power (11-22 kW) OBCs.